Invention Grant
- Patent Title: Selective deposition of silicon nitride films for spacer applications
-
Application No.: US15455744Application Date: 2017-03-10
-
Publication No.: US10319583B2Publication Date: 2019-06-11
- Inventor: Ning Li , Mihaela Balseanu , Li-Qun Xia
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311 ; C23C16/04 ; C23C16/34 ; C23C16/455 ; C23C16/56 ; H01L21/3105
Abstract:
Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.
Public/Granted literature
- US20170263437A1 Selective Deposition Of Silicon Nitride Films For Spacer Applications Public/Granted day:2017-09-14
Information query
IPC分类:
