Invention Grant
- Patent Title: Hybrid-channel nano-sheets FETs
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Application No.: US15795975Application Date: 2017-10-27
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Publication No.: US10332802B2Publication Date: 2019-06-25
- Inventor: Zhenxing Bi , Kangguo Cheng , Peng Xu , Wenyu Xu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L21/8238 ; H01L29/06 ; H01L21/02 ; H01L27/092 ; H01L29/775
Abstract:
Integrated chips include a first device and a second device. The first device includes a stack of vertically arranged sheets of a first channel material, a source and drain region having a first dopant type, and a first work function metal layer formed from a first work function metal. The second device includes a stack of vertically arranged sheets of a second channel material, a source and drain region having a second dopant type, and a second work function metal layer formed from a second work function metal.
Public/Granted literature
- US20180190544A1 HYBRID-CHANNEL NANO-SHEET FETS Public/Granted day:2018-07-05
Information query
IPC分类:
