- Patent Title: Method for manufacturing crystalline silicon substrate for solar cell, method for manufacturing crystalline silicon solar cell, and method for manufacturing crystalline silicon solar cell module
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Application No.: US15560596Application Date: 2016-01-22
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Publication No.: US10333012B2Publication Date: 2019-06-25
- Inventor: Toshihiko Uto , Takashi Suezaki , Wataru Yoshida
- Applicant: KANEKA CORPORATION
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: KANEKA CORPORATION
- Current Assignee: KANEKA CORPORATION
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Hauptman Ham, LLP
- Priority: JP2015-061768 20150324
- International Application: PCT/JP2016/051852 WO 20160122
- International Announcement: WO2016/152228 WO 20160929
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0236 ; H01L31/0747

Abstract:
The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.
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