A method and apparatus to measure specular reflection intensity, specular reflection angle, near specular scattered radiation, and large angle scattered radiation and determine the location and type of defect present in a first and a second transparent solid that have abutting surfaces. The types of defects include a top surface particle, an interface particle, a bottom surface particle, an interface bubble, a top surface pit, and a stain. The four measurements are conducted at multiple locations along the surface of the transparent solid and the measured information is stored in a memory device. The difference between an event peak and a local average of measurements for each type of measurement is used to detect changes in the measurements. Information stored in the memory device is processed to generate a work piece defect mapping indicating the type of defect and the defect location of each defect found.