Invention Grant
- Patent Title: Buffer circuit and semiconductor device
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Application No.: US15767666Application Date: 2016-01-07
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Publication No.: US10340909B2Publication Date: 2019-07-02
- Inventor: Kentaro Yoshida
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/050291 WO 20160107
- International Announcement: WO2017/119090 WO 20170713
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H02M1/08 ; H03K17/16 ; H03K17/687 ; H03K17/74 ; H03K17/567 ; H02M1/44 ; H02M1/00

Abstract:
Provided is a technique for a stably operable complementary single ended push pull (SEPP) circuit. A buffer circuit includes the following: an NPN transistor and a PNP transistor that constitute a complementary SEPP circuit; a first resistor; a second resistor; a first load element having one end connected to a gate of a semiconductor switching element and another end connected to a base of the NPN transistor; and a second load element having one end connected to the gate of the semiconductor switching element and another end connected to a base of the PNP transistor.
Public/Granted literature
- US20180309437A1 BUFFER CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2018-10-25
Information query
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