Invention Grant
- Patent Title: Cell contact
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Application No.: US15812274Application Date: 2017-11-14
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Publication No.: US10347487B2Publication Date: 2019-07-09
- Inventor: Che-Chi Lee , Hiromitsu Oshima
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/528

Abstract:
Apparatus and methods of forming an apparatus can include one or more cell contacts in an integrated circuit in a variety of applications. In various embodiments, a resist underlayer can be formed on a dielectric spacer formed on a structure for a cell contact, where the structure can include a patterned area of pillars on a silicon-rich dielectric anti-reflective coating region disposed on a dielectric region. The resist underlayer, the dielectric spacer, the patterned area of pillars, the silicon-rich dielectric anti-reflective coating, and the dielectric region can be processed to form an array of columns in the dielectric region. Regions between the columns of the array of columns can be filled with conductive material, forming the cell contact. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20190148136A1 CELL CONTACT Public/Granted day:2019-05-16
Information query
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