Invention Grant
- Patent Title: Schemes for selective deposition for patterning applications
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Application No.: US15880671Application Date: 2018-01-26
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Publication No.: US10347495B2Publication Date: 2019-07-09
- Inventor: Atashi Basu , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/285 ; H01L21/02 ; H01L21/321 ; H01L21/32
Abstract:
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.
Public/Granted literature
- US20180218914A1 Schemes for Selective Deposition for Patterning Applications Public/Granted day:2018-08-02
Information query
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