Invention Grant
- Patent Title: Semiconductor package and method of making the same
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Application No.: US15686930Application Date: 2017-08-25
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Publication No.: US10347550B2Publication Date: 2019-07-09
- Inventor: Isamu Nishimura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2016-180294 20160915
- Main IPC: H01L23/13
- IPC: H01L23/13 ; H01L21/48 ; H01L23/14 ; H01L23/373 ; H01L23/498 ; H01L23/00 ; H01L43/04 ; H01L43/06

Abstract:
The present disclosure provides a semiconductor device and a method of making the same for suppressing warpages of an article due to a difference of temperature strains during the process of making the semiconductor device. The semiconductor device of the present disclosure includes a substrate having a main surface and a recess recessed therefrom; a semiconductor element disposed in the recess; a wiring portion connected to the substrate and electrically connected to the semiconductor element; and a sealing resin filled in the recess. The substrate includes an electrical insulative synthetic resin. The recess has a bottom surface and a connecting surface connected to the bottom surface and the main surface. The connecting surface includes a first inclined surface connected to the bottom surface; a second inclined surface connected to the main surface; and an intermediate surface connected to the first inclined surface and the second inclined surface.
Public/Granted literature
- US20180076106A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME Public/Granted day:2018-03-15
Information query
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