Invention Grant
- Patent Title: High-voltage metal-oxide-semiconductor transistor capable of preventing occurrence of exceedingly-large reverse current
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Application No.: US15854913Application Date: 2017-12-27
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Publication No.: US10347756B2Publication Date: 2019-07-09
- Inventor: Kuo-Chin Chiu , Cheng-Sheng Kao
- Applicant: Leadtrend Technology Corporation
- Applicant Address: TW Zhubei, Hsinchu County
- Assignee: LEADTREND TECHNOLOGY CORPORATION
- Current Assignee: LEADTREND TECHNOLOGY CORPORATION
- Current Assignee Address: TW Zhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW106100043A 20170103
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L27/07 ; H01L29/66 ; H01L21/82 ; H01L21/33 ; H01L29/10 ; H02M1/08 ; H02M7/217 ; H01L29/40 ; H01L29/423
Abstract:
An embodiment of the invention shows a high-voltage MOS field-effect transistor connected in series with a Schottky diode. When the Schottky diode is forwardly biased, the high-voltage MOSFET can act as a switch and sustain a high drain-to-source voltage. When the Schottky diode is reversely biased, the Schottky diode can protect the integrate circuit where the high-voltage MOSFET is formed, because the integrate circuit might otherwise burn out due to an exceedingly-large reverse current.
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