Invention Grant
- Patent Title: Resistive random access memory based multiplexers and field programmable gate arrays
-
Application No.: US15916566Application Date: 2018-03-09
-
Publication No.: US10348306B2Publication Date: 2019-07-09
- Inventor: Pierre-Emanuel Gaillardon , Xifan Tang , Gain Kim , Giovanni De Micheli , Edouard Giacomin
- Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION , École Polytechnique Fédérale de Lausanne
- Applicant Address: US UT Salt Lake City CH Lausanne
- Assignee: University of Utah Research Foundation,Ecole Polytechnique Federale de Lausanne (EPFL)
- Current Assignee: University of Utah Research Foundation,Ecole Polytechnique Federale de Lausanne (EPFL)
- Current Assignee Address: US UT Salt Lake City CH Lausanne
- Agency: Michael Best & Friedrich LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H03K19/173 ; H01L45/00 ; H01L27/24 ; G06F17/50 ; H03K19/177

Abstract:
Resistive random access memory (RRAM) based multiplexers and field programmable gate arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R programming structure to program the RRAMs. The programming structure includes two programming transistors connected between the power supply and the top electrode of the RRAM and two programming transistors connected between the power supply and the bottom electrode of the RRAM. The programming transistors are used to set and rest the RRAMs. In the RRAM-based multiplexer programming transistors connected to the bottom electrodes are shared between a plurality of RRAMs. The shared programming transistors and an output inverter of the RRAM are provided in a deep N-well of the RRAM-based multiplexer. The programming transistors connected to the top electrodes of the RRAMs and a plurality of input inverters are provided in a regular well of the RRAM-based multiplexer.
Public/Granted literature
- US20180262197A1 RESISTIVE RANDOM ACCESS MEMORY BASED MULTIPLEXERS AND FIELD PROGRAMMABLE GATE ARRAYS Public/Granted day:2018-09-13
Information query