Invention Grant
- Patent Title: Circuits and methods providing electronic band gap (EBG) structures at memory module electrical coupling
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Application No.: US15659187Application Date: 2017-07-25
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Publication No.: US10349513B2Publication Date: 2019-07-09
- Inventor: Priyatharshan Pathmanathan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP (36340)
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L23/522 ; H01L23/528 ; G06F13/40

Abstract:
A system includes: a printed circuit board having a plurality of conductive traces; a processing device coupled to the printed circuit board and in electrical communication with the plurality of conductive traces; a first memory module and a second memory module in electrical communication with the plurality of conductive traces and sharing channels of the conductive traces, wherein the first memory module is physically more proximate to the processing device than is the second memory module; and an electronic band gap (EBG) structure physically disposed in an area between the first memory module and the second memory module.
Public/Granted literature
- US20180035533A1 CIRCUITS AND METHODS PROVIDING ELECTRONIC BAND GAP (EBG) STRUCTURES AT MEMORY MODULE ELECTRICAL COUPLING Public/Granted day:2018-02-01
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