Invention Grant
- Patent Title: Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
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Application No.: US16257410Application Date: 2019-01-25
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Publication No.: US10374004B2Publication Date: 2019-08-06
- Inventor: Dok Won Lee , William David French , Keith Ryan Green
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/06 ; H01L43/14 ; H01L43/04
Abstract:
Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
Public/Granted literature
- US20190157342A1 INTEGRATED CIRCUIT WITH HALL EFFECT AND ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS Public/Granted day:2019-05-23
Information query
IPC分类:
