Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
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Application No.: US15332195Application Date: 2016-10-24
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Publication No.: US10374184B2Publication Date: 2019-08-06
- Inventor: Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-215053 20090916
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L51/50 ; H01L27/12 ; H01L27/32 ; H01L51/00 ; H01L29/786
Abstract:
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
Public/Granted literature
- US20170040400A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-02-09
Information query
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