Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15207493Application Date: 2016-07-11
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Publication No.: US10374592B2Publication Date: 2019-08-06
- Inventor: Masashi Akahane
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2014-143811 20140714
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H03K5/08 ; H03K17/16 ; H03K17/18 ; H02M1/08 ; H01L27/02 ; H01L27/06 ; H03K19/0175 ; H01L29/866

Abstract:
A semiconductor device includes a first circuit operating with a first potential as a reference potential and a second circuit operating with a second potential different from the first potential as a reference potential, able to reliably detect that a negative voltage is applied to the first circuit. The first circuit includes a current source. The current source supplies a current to the low side circuit, and changes the current in response to whether or not the first potential becomes a negative voltage with respect to the second potential. Also, the second circuit includes a negative voltage detection circuit. The negative voltage detection circuit monitors a change in the current supplied from the current source and detects that a negative voltage is applied to the high side circuit.
Public/Granted literature
- US20160322966A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-11-03
Information query
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