Invention Grant
- Patent Title: Integrated structure of mems pressure sensor and mems inertia sensor
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Application No.: US15554652Application Date: 2015-12-14
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Publication No.: US10407300B2Publication Date: 2019-09-10
- Inventor: Guoguang Zheng
- Applicant: Goertek.Inc
- Applicant Address: CN Weifang, Shandong
- Assignee: Goertek.Inc
- Current Assignee: Goertek.Inc
- Current Assignee Address: CN Weifang, Shandong
- Agency: Venable LLP
- Agent Michele V. Frank
- Priority: CN201510288750 20150529
- International Application: PCT/CN2015/097314 WO 20151214
- International Announcement: WO2016/192372 WO 20161208
- Main IPC: B81B7/02
- IPC: B81B7/02 ; G01L9/12 ; G01P15/125 ; G01P15/02 ; B81B3/00 ; B81B7/00 ; B81C1/00 ; G01L19/04

Abstract:
An integrated structure of an MEMS pressure sensor and an MEMS inertia sensor are provided, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate.
Public/Granted literature
- US20180044174A1 INTEGRATED STRUCTURE OF MEMS PRESSURE SENSOR AND MEMS INERTIA SENSOR Public/Granted day:2018-02-15
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