Invention Grant
- Patent Title: Using bias RF pulsing to effectively clean electrostatic chuck (ESC)
-
Application No.: US15821661Application Date: 2017-11-22
-
Publication No.: US10410845B2Publication Date: 2019-09-10
- Inventor: Kenny Linh Doan , Usama Dadu , Wonseok Lee , Daisuke Shimizu , Li Ling , Kevin Choi
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01J37/32 ; H02N13/00 ; H01L21/683 ; B08B5/00 ; B08B7/00 ; H01L21/67
Abstract:
Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.
Public/Granted literature
- US20190157052A1 USING BIAS RF PULSING TO EFFECTIVELY CLEAN ELECTROSTATIC CHUCK (ESC) Public/Granted day:2019-05-23
Information query
IPC分类:
