A current-sensing circuit for a memory and a sensing method thereof are provided. The current-sensing circuit includes a pre-charge circuit, a sensing current-to-voltage generator, an auxiliary current-to-voltage generator, a reference current-to-voltage generator, and a detection circuit. The pre-charge circuit provides a pre-charge signal to a selected bit line during a pre-charge time period. The sensing current-to-voltage generator generates a sensing voltage to a memory cell current of the selected bit line via a first load. The auxiliary current-to-voltage generator provides a detection voltage to a portion of the memory cell current of the selected bit line via a second load. The reference current-to-voltage generator provides a reference voltage during a data-sensing time period. The detection circuit determines an end time point of the pre-charge time period by comparing a detected voltage generated by the second load with a reference voltage.