Invention Grant
- Patent Title: Method of producing an optical semiconductor device
-
Application No.: US15556020Application Date: 2016-03-10
-
Publication No.: US10424703B2Publication Date: 2019-09-24
- Inventor: Yasunari Ooyabu , Hiroki Kono , Yi-min Chou
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: JP2015-052523 20150316; JP2016-043581 20160307
- International Application: PCT/JP2016/057597 WO 20160310
- International Announcement: WO2016/148019 WO 20160922
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/50 ; H01L23/00 ; H01L33/46

Abstract:
A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.
Public/Granted literature
Information query
IPC分类: