Invention Grant
- Patent Title: Patterning method
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Application No.: US15372091Application Date: 2016-12-07
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Publication No.: US10427185B2Publication Date: 2019-10-01
- Inventor: Qiang Wu , Huayong Hu , Chang Liu , Jianhua Ju , Charles Kwok Fung Lee
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410025114 20140120
- Main IPC: B05D3/06
- IPC: B05D3/06 ; B05B7/22 ; B41J2/447 ; G03F7/00 ; B05D1/02

Abstract:
A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.
Public/Granted literature
- US20170080456A1 PATTERNING METHOD Public/Granted day:2017-03-23
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