Invention Grant
- Patent Title: Plasma assisted doping on germanium
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Application No.: US15889828Application Date: 2018-02-06
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Publication No.: US10431462B2Publication Date: 2019-10-01
- Inventor: Yunsang Kim , Hyuk-Jun Kwon
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/223
- IPC: H01L21/223 ; H01L29/167 ; H01L21/324 ; H01L21/67 ; H01J37/00 ; H01L21/02
Abstract:
A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.
Public/Granted literature
- US20180233365A1 PLASMA ASSISTED DOPING ON GERMANIUM Public/Granted day:2018-08-16
Information query
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