Invention Grant
- Patent Title: Image sensor devices
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Application No.: US15876704Application Date: 2018-01-22
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Publication No.: US10431626B2Publication Date: 2019-10-01
- Inventor: Jun-Bo Chen
- Applicant: Silicon Optronics, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Silicon Optronics, Inc.
- Current Assignee: Silicon Optronics, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW106142915A 20171207
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/30 ; H01L27/148 ; H01L27/146 ; A61B5/00

Abstract:
An image sensor device is provided. The image sensor device includes a substrate, a plurality of photoelectric conversion units for collecting image signals disposed in the substrate, a first dielectric layer disposed upon the substrate, a plurality of metal layers disposed in the first dielectric layer, a trench disposed in the first dielectric layer and located between the adjacent metal layers, a filling material filled in the trench, a second dielectric layer disposed upon the first dielectric layer, and a light source or a detected object disposed over the second dielectric layer. The metal layer adjacent to the substrate is defined as a first metal layer. The metal layer adjacent to the top of the first dielectric layer is defined as a top metal layer. The trench extends from the top of the first dielectric layer towards the substrate to the first metal layer.
Public/Granted literature
- US20190181164A1 IMAGE SENSOR DEVICES Public/Granted day:2019-06-13
Information query
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