公开(公告)号：US11503236B2

公开(公告)日：2022-11-15

申请号：US17132351

申请日：2020-12-23

Applicant: Silicon Optronics, Inc.

Inventor： Chun-Hung Lin

IPC: H04N5/367 ,  H04N5/355 ,  H04N5/345

Abstract: An image-sensing system for the efficient detection of defective pixels is shown. An arithmetic logic unit (ALU) determines a defective pixel candidate of an image sensor based on the first frame captured by the image sensor, performs a lower-part comparison on the defective pixel candidate based on the first frame, and performs an upper-part comparison on the defective pixel candidate based on the second frame captured by the image sensor. The defective pixel candidate is confirmed to be defective based on the first frame as well as the second frame. Only limited pixel data is buffered for the defective pixel detection.

公开(公告)号：US20220231069A1

公开(公告)日：2022-07-21

申请号：US17581139

申请日：2022-01-21

Applicant: Silicon Optronics, Inc.

Inventor： Bo-Ray LEE

IPC: H01L27/146 ,  G01N33/50

Abstract: Image-sensing devices are provided. An image-sensing device includes a substrate, a first dielectric layer, an image sensor array, a plurality of nanowells and a plurality of electrodes. The first dielectric layer is formed on the substrate, and has a first side and a second side. The image sensor array is formed between the substrate and the second side of the first dielectric layer, and includes a plurality of image-sensing cells. The nanowells are formed in the first dielectric layer, and each of the nanowells has an opening on the first side of the first dielectric layer. Each of the electrodes extends from the second side to the first side of the first dielectric layer and is located between two adjacent nanowells.

公开(公告)号：US20210028212A1

公开(公告)日：2021-01-28

申请号：US16874062

申请日：2020-05-14

Applicant: Silicon Optronics, Inc.

Inventor： Yen-Chen CHANG ,  Bo-Ray LEE

IPC: H01L27/146

Abstract: An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

公开(公告)号：US20190317226A1

公开(公告)日：2019-10-17

申请号：US16204010

申请日：2018-11-29

Applicant: Silicon Optronics, Inc.

Inventor： Chi-Hsing HSU

IPC: G01T1/20 ,  H01L27/146 ,  H04N5/32

Abstract: An X-ray sensing device is provided. The X-ray sensing device includes a substrate, a first material layer, a circuit element, a photoelectric sensing element and a columnar structure. The first material layer is disposed over the substrate. The circuit element is disposed at a bottom portion of the first material layer. The photoelectric sensing is element disposed over the circuit element. The columnar structure is correspondingly disposed over the photoelectric sensing element and is in contact with the photoelectric sensing element. The columnar structure includes a scintillator material. The X-ray sensing device further includes a pad disposed on a top surface or a bottom surface of the first material layer and is coupled to the circuit element.

公开(公告)号：US09549133B2

公开(公告)日：2017-01-17

申请号：US14703224

申请日：2015-05-04

Applicant: Silicon Optronics, Inc.

Inventor： Chun-Hung Lin

IPC: H04N9/64 ,  H04N5/367

CPC classification number: H04N5/3675

Abstract: An image capture device with a reduced number of line buffers. Based on an nth line of image data provided from an image sensor array and buffered data in the line buffers, a logic circuit determines defective candidates in an nth line of image data. When the (n+p)th line of image data is provided from the image sensor array, the logic circuit reexamines the defective candidates in the nth line of image data, for defective-pixel compensation, based on the (n+p)th line of image data and the buffered data in the plurality of line buffers. The buffered data in the line buffers contains the (n−p)th to (n−1)th lines of image data while the nth line of image data is provided from the image sensor array, and contains the nth to (n+p−1)th lines of image data while the (n+p)th line of image data is provided from the image sensor array.

Abstract translation: 具有减少行数缓冲器数量的图像捕获设备。 基于从图像传感器阵列提供的第n行图像数据和行缓冲器中的缓冲数据，逻辑电路确定第n行图像数据中的有缺陷的候选。 当从图像传感器阵列提供图像数据的第（n + p）行时，逻辑电路基于第（n + p）th重新检查图像数据的第n行中的缺陷候选，用于缺陷像素补偿 图像数据行和多个行缓冲器中的缓冲数据。 行缓冲器中的缓冲数据包含第（n-p）至第（n-1）行图像数据，而第n行图像数据从图像传感器阵列提供，并且包含第n至（n + p -1）的图像数据，而从图像传感器阵列提供图像数据的第（n + p）行。

公开(公告)号：US09350927B2

公开(公告)日：2016-05-24

申请号：US14324666

申请日：2014-07-07

Applicant: Silicon Optronics, Inc.

Inventor： Xiaodong Luo

IPC: H04N5/361 ,  H04N101/00

CPC classification number: H04N5/361 ,  H04N2101/00

Abstract: An image sensor is provided. The image sensor includes a pixel array, an analog-to-digital converter, and a processor. The analog-to-digital converter converts a black level reference signal and a pix signal from the pixel array into a first digital signal and a second digital signal, respectively. The processor obtains a black level reference value according to the first digital signal, and obtains a compensation coefficient according to the black level reference value, a maximum digital level of the analog-to-digital converter and a full signal range value. The processor obtains pix data according to the compensation coefficient, the black level reference value and the second digital signal.

Abstract translation: 提供图像传感器。 图像传感器包括像素阵列，模数转换器和处理器。 模数转换器将来自像素阵列的黑电平参考信号和像素信号分别转换成第一数字信号和第二数字信号。 处理器根据第一数字信号获得黑电平参考值，并根据黑电平参考值，模数转换器的最大数字电平和全信号范围值获得补偿系数。 处理器根据补偿系数，黑电平参考值和第二数字信号获得图像数据。

公开(公告)号：US20150200228A1

公开(公告)日：2015-07-16

申请号：US14196759

申请日：2014-03-04

Applicant: Silicon Optronics, Inc.

Inventor： Yu-Yuan YAO

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract translation: 本发明提供了一种图像传感器装置，包括基板，形成在基板中的通道，形成在位于通道一侧的基板中的光电转移区域，形成在位于该基板的另一侧的基板中的电压转移区域 形成在所述基板上的第一栅极电介质层，形成在所述基板上的第二栅极介电层，其中所述第一栅极介电层和所述第二栅极介电层在所述沟道上方具有接头，并且所述第一栅极介电层的厚度 比第二栅极电介质层的厚度厚，并且形成在第一栅极介电层和第二栅极a上的栅极是电介质层。 本发明还提供了一种用于制造图像传感器装置的方法。

公开(公告)号：US20150123173A1

公开(公告)日：2015-05-07

申请号：US14075430

申请日：2013-11-08

Applicant: SILICON OPTRONICS, INC.

Inventor： Xinping He

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/3745

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, wherein the plurality of pixels include at least one reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of a reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. The plurality of processing and amplification circuits each comprises a source follower transistor, wherein the source follower transistor uses a PMOS.

Abstract translation: 有源像素传感器包括传感器管芯和电路管芯。 传感器管芯包括多个像素，其中每个像素包括光敏元件和传输栅极，浮动扩散区域，其中多个像素包括至少一个复位栅极。 电路管芯包括与传感器管芯的复位栅极相关联的多个处理和放大电路。 传感器管芯与电路管芯互连，利用多个管芯间互连，每个管芯互连连接到传感器管芯上的复位栅极的源节点和电路管芯上的处理和放大电路的节点。 多个处理和放大电路各自包括源极跟随器晶体管，其中源极跟随器晶体管使用PMOS。

公开(公告)号：US20220392935A1

公开(公告)日：2022-12-08

申请号：US17397106

申请日：2021-08-09

Applicant: Silicon Optronics, Inc.

Inventor： Bo-Ray LEE

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a substrate, a photodiode, and a storage node. The photodiode is disposed in the substrate and close to a first end of the substrate. The storage node is disposed in the substrate, adjacent to the photodiode, and close to the first end of the substrate. The image sensor further includes a first isolation structure, a first light shielding structure, an interlayer dielectric layer, and a lens structure. The first isolation structure is disposed in the substrate and over the storage node. The first light shielding structure is disposed in the first isolation structure. The interlayer dielectric layer is disposed over a second end of the substrate. The second end is opposite the first end. The lens structure is disposed over the interlayer dielectric layer.

公开(公告)号：US11317041B1

公开(公告)日：2022-04-26

申请号：US17246931

申请日：2021-05-03

Applicant: Silicon Optronics, Inc.

Inventor： Sheng-Yi Peng

IPC: H04N5/355 ,  H04N5/369 ,  H04N5/3745

Abstract: A method for black-level calibration for an image-sensing device is provided. The image-sensing device includes a pixel array that has a first non-light-sensing region, a second non-light-sensing region, and an image-pixel region. The method includes the following steps: receiving a first analog signal, a second analog signal, and a third analog signal respectively from the first non-light-sensing region, the second non-light-sensing region, and the image-pixel region every predetermined scanning period; utilizing an analog-to-digital converter (ADC) of the image-sensing device to convert the first analog signal, the second analog signal, and the third analog signal to a first digital signal, a second digital signal, and a third digital signal, respectively; and performing a black-level-calibration (BLC) process on the first digital signal, the second digital signal, and the third digital signal to generate a black-level-calibrated digital signal, wherein the BLC process is implemented using a Kalman filter.