Invention Grant
- Patent Title: Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
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Application No.: US15340512Application Date: 2016-11-01
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Publication No.: US10435790B2Publication Date: 2019-10-08
- Inventor: Atsuki Fukazawa , Masaru Zaitsu , Masaki Tokunaga , Hideaki Fukuda
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: C23C16/505
- IPC: C23C16/505 ; C23C16/32 ; C23C16/34 ; C23C16/40 ; C23C16/44 ; C23C16/455 ; C23C16/509 ; C23C16/52 ; C23C16/04

Abstract:
A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.
Public/Granted literature
- US20180119283A1 METHOD OF SUBATMOSPHERIC PLASMA-ENHANCED ALD USING CAPACITIVELY COUPLED ELECTRODES WITH NARROW GAP Public/Granted day:2018-05-03
Information query
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