Invention Grant
- Patent Title: Methods and devices for enhancing mobility of charge carriers
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Application No.: US13856325Application Date: 2013-04-03
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Publication No.: US10438856B2Publication Date: 2019-10-08
- Inventor: John H. Zhang , Chengyu Niu , Heng Yang
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L29/423 ; H01L29/49 ; H01L21/28 ; H01L29/78 ; H01L21/285 ; H01L29/417 ; H01L29/66 ; H01L27/092
Abstract:
Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.
Public/Granted literature
- US20140299938A1 METHODS AND DEVICES FOR ENHANCING MOBILITY OF CHARGE CARRIERS Public/Granted day:2014-10-09
Information query
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