公开(公告)号：US09111938B2

公开(公告)日：2015-08-18

申请号：US14538944

申请日：2014-11-12

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  Renesas Electronic Corporation ,  STMICROELECTRONICS, INC.

Inventor： Frieder H. Baumann ,  Tibor Bolom ,  Chao-Kun Hu ,  Koichi Motoyama ,  Chengyu Niu ,  Andrew H. Simon

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

公开(公告)号：US20150061135A1

公开(公告)日：2015-03-05

申请号：US14538944

申请日：2014-11-12

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  Renesas Electronic Corporation ,  STMICROELECTRONICS, INC.

Inventor： Frieder H. Baumann ,  Tibor Bolom ,  Chao-Kun Hu ,  Koichi Motoyama ,  Chengyu Niu ,  Andrew H. Simon

IPC: H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

Abstract translation: 具有位于邻近侧壁的扩散阻挡层的结构和在介电材料层中蚀刻的开口的底部。 该结构还具有直接位于扩散阻挡层顶部的金属衬垫，直接位于金属衬垫顶部上的种子层，其中种子层由包括铜的材料制成，铜材料直接位于种子顶部 层，直接位于铜材料的顶部和选择性上的金属盖，以及直接位于金属盖的顶部并且邻近金属盖的封盖层。

公开(公告)号：US20140138832A1

公开(公告)日：2014-05-22

申请号：US13682162

申请日：2012-11-20

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chengyu Niu ,  Andrew Simon ,  Keith Kwong Hon Wong ,  Yun-Yu Wang

IPC: H01L23/48 ,  C23C14/34 ,  H01L21/768

CPC classification number: H01L23/481 ,  C23C14/046 ,  C23C14/34 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.

Abstract translation: 沟槽在电介质层中打开。 然后将沟槽衬有阻挡层和金属种子层。 金属种子层是非均匀掺杂的，并且表现出随沟槽深度变化的垂直掺杂梯度。 然后将衬里的沟槽填充有金属填充材料。 然后在金属填充的沟槽上沉积电介质盖层。 然后将来自非均匀掺杂的金属种子层的掺杂剂迁移到金属填充沟槽和电介质盖层之间的界面，以形成自对准金属帽。

公开(公告)号：US10546789B2

公开(公告)日：2020-01-28

申请号：US14986229

申请日：2015-12-31

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L21/285 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

公开(公告)号：US20140299938A1

公开(公告)日：2014-10-09

申请号：US13856325

申请日：2013-04-03

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/28132 ,  H01L21/2855 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/41783 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/7843 ,  H01L29/7845 ,  H01L2924/04941 ,  H01L2924/0465 ,  H01L2924/04541 ,  H01L2924/01074 ,  H01L2924/04953 ,  H01L2924/01029 ,  H01L2924/01022 ,  H01L2924/01007 ,  H01L2924/0505 ,  H01L2924/01013

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

Abstract translation: 增强载流子迁移率的方法和装置。 集成电路可以包括两种类型的半导体器件。 第一类型的装置可以包括金属门和以第一方式应变的通道。 第二类型的装置可以包括金属门和以第二方式应变的通道。 这些门可以共同地包括三种或更少的金属材料。 门可以共享相同的金属材料。 在集成电路上形成半导体器件的方法可以包括分别在对应于第一和第二栅极的集成电路的第一和第二区域中沉积第一和第二金属层。

公开(公告)号：US10553497B2

公开(公告)日：2020-02-04

申请号：US15276516

申请日：2016-09-26

Applicant: STMICROELECTRONICS, INC.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L21/285 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

公开(公告)号：US20140138837A1

公开(公告)日：2014-05-22

申请号：US13682326

申请日：2012-11-20

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC

Inventor： Chengyu Niu ,  Andrew Simon ,  Tibor Bolom

IPC: H01L21/768 ,  H01L23/485

CPC classification number: H01L21/76846 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A trench is opened in a dielectric layer. The trench is then lined with a sandwiched diffusion barrier and metal liner structure and a metal seed layer. The sandwiched diffusion barrier and metal liner structure includes a conformal metal liner layer sandwiched between a first diffusion barrier layer and a second diffusion barrier layer. The metal seed layer is at least lightly doped. The lined trench is then filled by electroplating with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.

Abstract translation: 沟槽在电介质层中打开。 然后将沟槽衬有夹层扩散阻挡层和金属衬垫结构和金属种子层。 夹层扩散阻挡层和金属衬垫结构包括夹在第一扩散阻挡层和第二扩散阻挡层之间的共形金属衬垫层。 金属种子层至少轻掺杂。 然后用金属填充材料电镀填充衬里的沟槽。 然后在金属填充的沟槽上沉积电介质盖层。 掺杂金属种子层的掺杂剂然后迁移到金属填充沟槽和电介质盖层之间的界面，以形成自对准的金属帽。

公开(公告)号：US10438856B2

公开(公告)日：2019-10-08

申请号：US13856325

申请日：2013-04-03

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L21/285 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

公开(公告)号：US20160118307A1

公开(公告)日：2016-04-28

申请号：US14986229

申请日：2015-12-31

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L21/8238 ,  H01L29/78 ,  H01L21/285 ,  H01L21/28 ,  H01L29/66 ,  H01L29/417

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

Abstract translation: 增强载流子迁移率的方法和装置。 集成电路可以包括两种类型的半导体器件。 第一类型的装置可以包括金属门和以第一方式应变的通道。 第二类型的装置可以包括金属门和以第二方式应变的通道。 这些门可以共同地包括三种或更少的金属材料。 门可以共享相同的金属材料。 在集成电路上形成半导体器件的方法可以包括分别在对应于第一和第二栅极的集成电路的第一和第二区域中沉积第一和第二金属层。

公开(公告)号：US08729702B1

公开(公告)日：2014-05-20

申请号：US13682162

申请日：2012-11-20

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Chengyu Niu ,  Andrew Simon ,  Keith Kwong Hon Wong ,  Yun-Yu Wang

IPC: H01L23/40 ,  H01L21/82 ,  C23C14/00

CPC classification number: H01L23/481 ,  C23C14/046 ,  C23C14/34 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.

Abstract translation: 沟槽在电介质层中打开。 然后将沟槽衬有阻挡层和金属种子层。 金属种子层是非均匀掺杂的，并且表现出随沟槽深度变化的垂直掺杂梯度。 然后将衬里的沟槽填充有金属填充材料。 然后在金属填充的沟槽上沉积电介质盖层。 然后将来自非均匀掺杂的金属种子层的掺杂剂迁移到金属填充沟槽和电介质盖层之间的界面，以形成自对准金属帽。