Invention Grant
- Patent Title: Wire bond connection with intermediate contact structure
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Application No.: US16078579Application Date: 2016-04-01
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Publication No.: US10438916B2Publication Date: 2019-10-08
- Inventor: Yong She
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/CN2016/078363 WO 20160401
- International Announcement: WO2017/166308 WO 20171005
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L21/56

Abstract:
Techniques and mechanisms for provide interconnection with integrated circuitry. In an embodiment, a packaged device includes a substrate and one or more integrated circuit (IC) dies. A first conductive pad is formed at a first side of a first IC die, and a second conductive pad is formed at a second side of the substrate or another IC die. Wire bonding couples a wire between the first conductive pad and the second conductive pad, wherein a distal end of the wire is bonded, via a bump, to an adjoining one of the first conductive pad and the second conductive pad. A harness of the bump, which is less than a hardness of the wire, mitigates damage to the adjoining pad that might otherwise occur as a result of wire bonding stresses. In another embodiment, the wire includes copper (Cu) and the bump includes gold (Au) or silver (Ag).
Public/Granted literature
- US20190051627A1 WIRE BOND CONNECTION WITH INTERMEDIATE CONTACT STRUCTURE Public/Granted day:2019-02-14
Information query
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