Invention Grant
- Patent Title: Stress relieving semiconductor layer
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Application No.: US16022939Application Date: 2018-06-29
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Publication No.: US10460952B2Publication Date: 2019-10-29
- Inventor: Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L29/15 ; H01L33/00 ; H01L33/12 ; H01L33/22 ; H01L33/32
Abstract:
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
Public/Granted literature
- US20180323071A1 Stress Relieving Semiconductor Layer Public/Granted day:2018-11-08
Information query
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