Invention Grant
- Patent Title: Water-free etching methods
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Application No.: US15792376Application Date: 2017-10-24
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Publication No.: US10468267B2Publication Date: 2019-11-05
- Inventor: Zhijun Chen , Lin Xu , Anchuan Wang , Nitin Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/306 ; H01L21/3213 ; H01J37/00 ; H01L21/67
Abstract:
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.
Public/Granted literature
- US20180350619A1 WATER-FREE ETCHING METHODS Public/Granted day:2018-12-06
Information query
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