A power semiconductor device is provided comprising a wafer, wherein in a termination region of the device a passivation layer structure is formed at least on a portion of a surface of the wafer and the passivation layer structure comprises in an order from the surface of the wafer in a direction away from the wafer a semi-insulating layer, a silicon nitride layer, an undoped silicate glass layer and an organic dielectric layer. The silicon nitride layer has a layer thickness of at least 0.5 μm. The organic dielectric layer its attached to the undoped silicate glass layer and the undoped silicate glass layer is attached to the silicon nitride layer.