Invention Grant
- Patent Title: Formation of fine pitch traces using ultra-thin PAA modified fully additive process
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Application No.: US15887346Application Date: 2018-02-02
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Publication No.: US10468342B2Publication Date: 2019-11-05
- Inventor: Kelvin Po Leung Pun , Chee Wah Cheung
- Applicant: Compass Technology Company Limited
- Applicant Address: HK Shatin, New Territories
- Assignee: Compass Technology Company, Ltd.
- Current Assignee: Compass Technology Company, Ltd.
- Current Assignee Address: HK Shatin, New Territories
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Rosemary L. S. Pike
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/538 ; C23C18/16 ; C25D3/38 ; C25D5/02 ; H01L23/00

Abstract:
A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A Ni—P seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the Ni—P seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and Ni—P seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.
Public/Granted literature
- US20190244882A1 Formation of Fine Pitch Traces Using Ultra-Thin PAA Modified Fully Additive Process Public/Granted day:2019-08-08
Information query
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