Semiconductor memory devices are provided. A semiconductor memory device includes a substrate and a stack including a plurality of layers on the substrate. Each of the plurality of layers includes semiconductor patterns and a first conductive line that is connected to at least one of the semiconductor patterns. A second conductive line and a third conductive line penetrate the stack. The semiconductor patterns include a first semiconductor pattern and a second semiconductor pattern that are adjacent and spaced apart from each other in a first layer among the plurality of layers. The third conductive line is between, and connected in common to, the first and second semiconductor patterns.