Invention Grant
- Patent Title: Control device using GaN semiconductor
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Application No.: US15796315Application Date: 2017-10-27
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Publication No.: US10469040B2Publication Date: 2019-11-05
- Inventor: Kiyotaka Kasahara
- Applicant: ADVANTEST Corporation
- Applicant Address: JP Tokyo
- Assignee: ADVANTEST Corporation
- Current Assignee: ADVANTEST Corporation
- Current Assignee Address: JP Tokyo
- Agency: Osha Liang LLP
- Priority: JP2016-256523 20161228
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/21 ; H03G3/30 ; H02M1/08 ; H03F3/217

Abstract:
A control device includes: a differential amplification circuit that amplifies a difference with respect to an input signal; and a clipping circuit that is connected to an output side of the differential amplification circuit and clips an input voltage. The differential amplification circuit includes a plurality of switching elements formed of a GaN semiconductor, and the clipping circuit includes a switching element formed of the GaN semiconductor.
Public/Granted literature
- US20180183393A1 CONTROL DEVICE USING GAN SEMICONDUCTOR Public/Granted day:2018-06-28
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