Invention Grant
- Patent Title: Microelectronics package providing increased memory component density
-
Application No.: US15473544Application Date: 2017-03-29
-
Publication No.: US10475766B2Publication Date: 2019-11-12
- Inventor: Bilal Khalaf
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L23/498 ; H01L25/03 ; H01L25/10 ; H01L25/00 ; H01L23/00

Abstract:
Examples herein include a solid state drive microelectronics package assembly including a substrate and a plurality of microelectronic components coupled to the substrate. The plurality of microelectronic components may be being separated from one another end-to-end by a component gap. The microelectronics package may further include a die package coupled to the substrate, wherein the die package extends across the component gap and is vertically disposed between the plurality of microelectronic components and the substrate. In some examples, the microelectronics components and the die package are each coupled to the substrate by a plurality of connection components (e.g. a solder ball array). The plurality of connection components may be arranged on the microelectronics components to define one or more open areas devoid of any connection components. The die package may be positioned/nested within the one or more open areas to increase overall microelectronic component density of the microelectronics package.
Public/Granted literature
- US20180286833A1 Microelectronics Package Providing Increased Memory Component Density Public/Granted day:2018-10-04
Information query
IPC分类: