Invention Grant
- Patent Title: Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
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Application No.: US15562462Application Date: 2016-04-08
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Publication No.: US10476234B2Publication Date: 2019-11-12
- Inventor: Jae-Hyun Ryou , Shahab Shervin , Seung Hwan Kim
- Applicant: University of Houston System
- Applicant Address: US TX Houston
- Assignee: UNIVERSITY OF HOUSTON SYSTEM
- Current Assignee: UNIVERSITY OF HOUSTON SYSTEM
- Current Assignee Address: US TX Houston
- Agency: Conley Rose, P.C.
- International Application: PCT/US2016/026707 WO 20160408
- International Announcement: WO2016/164765 WO 20161013
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01S5/32 ; H01L29/778 ; H01L29/06 ; H01L21/8238 ; H01L29/49 ; H01L29/78 ; H01S5/323 ; H01S5/34 ; H01L29/10 ; H01L29/20 ; H01L29/22 ; H01L33/02 ; H01L33/48

Abstract:
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
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Information query
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