Invention Grant
- Patent Title: Transistors with ballistic or quasi-ballistic carrier behavior and low resistance in source and drain nodes
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Application No.: US15962634Application Date: 2018-04-25
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Publication No.: US10522683B2Publication Date: 2019-12-31
- Inventor: Raseong Kim , Uygar Avci , Ian Young
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L29/16 ; H01L21/285 ; H01L21/768 ; H01L21/02
Abstract:
An embodiment includes an apparatus comprising: a transistor including an epitaxial source, a channel, and an epitaxial drain; a fin that includes the channel, the channel including a long axis and a short axis; a source contact corresponding to the source; and a drain contact corresponding to the drain; wherein (a) an additional axis intersects each of the source contact, the source, the drain, and the drain contact, and (b) the additional axis is parallel to the long axis. Other embodiments are described herein.
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