A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.