Invention Grant
- Patent Title: Silicon germanium alloy fins with reduced defects
-
Application No.: US15445287Application Date: 2017-02-28
-
Publication No.: US10529829B2Publication Date: 2020-01-07
- Inventor: Kangguo Cheng , Hong He , Juntao Li
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/165 ; H01L29/66 ; H01L21/322 ; H01L21/02 ; H01L21/324
Abstract:
A silicon germanium alloy is formed on sidewall surfaces of a silicon fin. An oxidation process or a thermal anneal is employed to convert a portion of the silicon fin into a silicon germanium alloy fin. In some embodiments, the silicon germanium alloy fin has a wide upper portion and a narrower lower portion. In such an embodiment, the wide upper portion has a greater germanium content than the narrower lower portion. In other embodiments, the silicon germanium alloy fin has a narrow upper portion and a wider lower portion. In this embodiment, the narrow upper portion of the silicon germanium alloy fin has a greater germanium content than the wider lower portion of the silicon germanium alloy fin.
Public/Granted literature
- US20170170321A1 SILICON GERMANIUM ALLOY FINS WITH REDUCED DEFECTS Public/Granted day:2017-06-15
Information query
IPC分类:
