Invention Grant
- Patent Title: Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction
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Application No.: US15336309Application Date: 2016-10-27
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Publication No.: US10535652B2Publication Date: 2020-01-14
- Inventor: Kangguo Cheng , Xin Miao , Wenyu Xu , Chen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/08 ; H01L21/8234 ; H01L21/764 ; H01L29/78
Abstract:
A method of fabricating adjacent vertical fins with top source/drains having an air spacer and a self-aligned top junction, including, forming two or more vertical fins on a bottom source/drain, forming a top source/drain on each of the two or more vertical fins, wherein the top source/drains are formed to a size that leaves a gap between the adjacent vertical fins, and forming a source/drain liner on the top source/drains, where the source/drain liner occludes the gap between adjacent top source/drains to form a void space between adjacent vertical fins.
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