Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15971367Application Date: 2018-05-04
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Publication No.: US10535799B2Publication Date: 2020-01-14
- Inventor: Tzu-Chieh Hsu , Yi-Wen Huang , Shou-Lung Chen , Hsin-Kang Chen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10 ; H01L33/60 ; H01L33/20 ; H01L33/62 ; H01L33/38

Abstract:
A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.
Public/Granted literature
- US20180331256A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-11-15
Information query
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