- Patent Title: Air-gap top spacer and self-aligned metal gate for vertical fets
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Application No.: US16043588Application Date: 2018-07-24
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Publication No.: US10541312B2Publication Date: 2020-01-21
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Theodorus E. Standaert , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/423 ; H01L29/66 ; H01L29/786 ; H01L23/31 ; H01L29/78 ; C23C14/06 ; C23C14/08 ; C23C14/58 ; C23C16/34 ; C23C16/40 ; C23C16/56 ; H01L21/02 ; H01L21/306 ; H01L21/308 ; H01L21/3105 ; H01L21/321 ; H01L29/08 ; H01L29/10 ; H01L29/51
Abstract:
A transistor includes a channel fin. A gate stack is formed on sidewalls of the channel fin. A top spacer is formed over the gate stack. The top spacer includes dielectric material that fully encapsulates air gaps directly above the gate stack. A top source/drain region formed on the channel fin.
Public/Granted literature
- US20180350939A1 AIR-GAP TOP SPACER AND SELF-ALIGNED METAL GATE FOR VERTICAL FETS Public/Granted day:2018-12-06
Information query
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