Invention Grant
- Patent Title: Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
-
Application No.: US16175035Application Date: 2018-10-30
-
Publication No.: US10551734B2Publication Date: 2020-02-04
- Inventor: Hiroaki Shishido , Osamu Nozawa , Takenori Kajiwara
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JP2014-265189 20141226
- Main IPC: G03F1/32
- IPC: G03F1/32 ; H01L21/027 ; C23C14/00 ; C23C14/06 ; C23C14/10 ; C23C14/18 ; C23C14/34 ; G03F1/58 ; G03F1/80 ; G03F7/20 ; G03F7/34

Abstract:
A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
Public/Granted literature
Information query