Invention Grant
- Patent Title: Technologies for inverting lithographic patterns and semiconductor devices including high aspect ratio structures
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Application No.: US15755466Application Date: 2015-09-25
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Publication No.: US10553430B2Publication Date: 2020-02-04
- Inventor: Anthony A. St. Amour , Christopher P. Auth
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- International Application: PCT/US2015/052321 WO 20150925
- International Announcement: WO2017/052614 WO 20170330
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/306 ; H01L21/308 ; H01L21/768 ; H01L23/522 ; H01L29/78
Abstract:
Technologies for inverting lithographic patterns are described. In some embodiments the technologies include a method for inverting a lithographic pattern of hole precursors, so as to form one or more high aspect ratio structures on or in a surface of a substrate.
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