Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
-
Application No.: US16259459Application Date: 2019-01-28
-
Publication No.: US10553761B2Publication Date: 2020-02-04
- Inventor: Fu Chun Tsai , Wen Luh Liao , Shih I Chen , Chia Liang Hsu , Chih Chiang Lu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW102143141A 20131128
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/42 ; H01L33/62 ; H01L33/46 ; H01L33/22 ; H01L33/30 ; H01L33/00

Abstract:
A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.
Public/Granted literature
- US20190172977A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-06-06
Information query
IPC分类: