A method is presented for forming vertical crossbar resistive random access memory (RRAM) cells. The method includes forming a substantially U-shaped bottom electrode over a substrate, filling the U-shaped bottom electrode with a first conductive material, capping the U-shaped bottom electrode with a dielectric cap, depositing a high-k material, and forming a top electrode such that active areas of the RRAM cells are vertically aligned and the U-shaped bottom electrode is shared between neighboring RRAM cells.