Invention Grant
- Patent Title: Capacitor structure and method of manufacturing the same
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Application No.: US15986827Application Date: 2018-05-23
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Publication No.: US10566415B2Publication Date: 2020-02-18
- Inventor: Cheol Soo Park , Ming-Tang Chen , Chun-Chieh Wang
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: CN201710430909 20170609
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108

Abstract:
Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.
Public/Granted literature
- US20180358428A1 CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-12-13
Information query
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