Invention Grant
- Patent Title: Photodetector with superconductor nanowire transistor based on interlayer heat transfer
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Application No.: US16046815Application Date: 2018-07-26
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Publication No.: US10566516B2Publication Date: 2020-02-18
- Inventor: Faraz Najafi
- Applicant: PsiQuantum Corp.
- Applicant Address: US CA Palo Alto
- Assignee: PSIQUANTUM CORP.
- Current Assignee: PSIQUANTUM CORP.
- Current Assignee Address: US CA Palo Alto
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L39/10
- IPC: H01L39/10 ; H01L31/113 ; H01L39/16 ; G01J1/44 ; H01L31/0224 ; H01L29/43 ; H01L29/786 ; H01L39/14

Abstract:
The various implementations described herein include methods, devices, and systems for detecting light. In one aspect, a photodetector device includes: a superconducting wire, and a transistor that includes a semiconducting component and a superconducting component. The superconducting wire is electrically coupled to the superconducting component. The semiconducting component is located adjacent to the superconducting component. The superconducting component is configured to, in response to receiving an input current exceeding a current threshold, transition from a superconducting state to a non-superconducting state and generate heat sufficient to increase a temperature of the semiconducting component from a temperature below a semiconducting threshold temperature to a temperature above the semiconducting threshold temperature.
Public/Granted literature
- US20190035999A1 PHOTODETECTOR WITH SUPERCONDUCTOR NANOWIRE TRANSISTOR BASED ON INTERLAYER HEAT TRANSFER Public/Granted day:2019-01-31
Information query
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