Invention Grant
- Patent Title: Selective epitaxially grown III-V materials based devices
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Application No.: US16198725Application Date: 2018-11-21
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Publication No.: US10573717B2Publication Date: 2020-02-25
- Inventor: Niti Goel , Gilbert Dewey , Niloy Mukherjee , Matthew V. Metz , Marko Radosavljevic , Benjamin Chu-Kung , Jack T. Kavalieros , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/205 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/20
Abstract:
A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.
Public/Granted literature
- US20190088747A1 SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES Public/Granted day:2019-03-21
Information query
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