Invention Grant
- Patent Title: Interconnect structure having spacer disposed on sidewall of conductive layer, manufacturing method thereof, and semiconductor structure
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Application No.: US15871025Application Date: 2018-01-14
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Publication No.: US10580718B2Publication Date: 2020-03-03
- Inventor: Ming-Chung Chiang
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: CN201710397007 20170531
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/48 ; H01L29/40 ; H01L23/522 ; B82Y99/00 ; B82Y30/00 ; B82Y10/00
Abstract:
An interconnect structure including a conductive layer, a spacer, a dielectric layer, and a contact is provided. The conductive layer is disposed on a substrate. The spacer is disposed on a sidewall of the conductive layer. The dielectric layer covers the conductive layer and the spacer. The contact is disposed in the dielectric layer and located on the conductive layer.
Public/Granted literature
Information query
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