Invention Grant
- Patent Title: Fluorine doped non-volatile memory cells and methods for forming the same
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Application No.: US15904041Application Date: 2018-02-23
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Publication No.: US10586705B2Publication Date: 2020-03-10
- Inventor: Hung-Lin Chen , Shiuan-Jeng Lin , Wen-Chih Chiang , Po-Ming Chen , Tza-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/51 ; H01L21/3115 ; H01L29/788 ; H01L21/8234 ; H01L21/8238 ; H01L21/266
Abstract:
A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.
Public/Granted literature
- US20190165180A1 FLUORINE DOPED NON-VOLATILE MEMORY CELLS AND METHODS FOR FORMING THE SAME Public/Granted day:2019-05-30
Information query
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