Invention Grant
- Patent Title: Buried power rails
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Application No.: US16011377Application Date: 2018-06-18
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Publication No.: US10586765B2Publication Date: 2020-03-10
- Inventor: Jeffrey Smith , Anton J. Devilliers , Kandabara Tapily
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L21/762 ; H01L29/06 ; H01L23/532 ; H01L21/8238 ; H01L21/822 ; H01L29/78 ; H01L21/74 ; H01L27/06 ; H01L27/092 ; H01L29/775 ; H01L29/66
Abstract:
Aspects of the disclosure provide a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a power rail formed in an isolation trench. The power rail is covered by a dielectric cap that isolates the power rail from conductive pattern structures on the dielectric cap. Further, an opening is selectively formed in the dielectric cap and is filled with conductive material to selectively connect a conductive pattern structure with the power rail.
Public/Granted literature
- US20180374791A1 BURIED POWER RAILS Public/Granted day:2018-12-27
Information query
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